Simulating the Random Dopant Effect: A New Three- Dimensional Monte Carlo Approach
نویسندگان
چکیده
In this work, we present a new three-dimensional Monte Carlo (MC) method which naturally recovers the realspace carrier-impurity Coulomb interaction by mesh-based resolution of Poisson’s equation. This method necessitates no additional modifications to the conventional MC simulator, thus simplifying the implementation process. The new method has been validated through the reproduction of the doping concentration dependent low-field electron and hole mobility in bulk Si. It is shown that our method can be an efficient alternative to the particle-particle-particle-mesh (P 3 M) approach, which is useful for the simulation of discrete random dopant fluctuation (RDF) effect. Keywords-random dopant fluctuation (RDF); Monte Carlo; Coulomb interation; impurity
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